Other articles related with "resistive switching mechanism":
97302 Ya-Qi Chen(陈亚琦), Zheng-Hua Tang(唐政华), Chun-Zhi Jiang(蒋纯志), and De-Gao Xu(徐徳高)
  Resistive switching properties of SnO2 nanowires fabricated by chemical vapor deposition
    Chin. Phys. B   2023 Vol.32 (9): 97302-097302 [Abstract] (116) [HTML 0 KB] [PDF 4276 KB] (28)
97305 Rui Yang(杨蕊)
  Review of resistive switching mechanisms for memristive neuromorphic devices
    Chin. Phys. B   2020 Vol.29 (9): 97305-097305 [Abstract] (671) [HTML 0 KB] [PDF 5417 KB] (436)
117306 Tingting Tan(谭婷婷), Tingting Guo(郭婷婷), Zhihui Wu(吴志会), Zhengtang Liu(刘正堂)
  Charge transport and bipolar switching mechanismin a Cu/HfO2/Pt resistive switching cell
    Chin. Phys. B   2016 Vol.25 (11): 117306-117306 [Abstract] (610) [HTML 1 KB] [PDF 1263 KB] (358)
38404 Huang Da (黄达), Wu Jun-Jie (吴俊杰), Tang Yu-Hua (唐玉华)
  Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor
    Chin. Phys. B   2014 Vol.23 (3): 38404-038404 [Abstract] (537) [HTML 1 KB] [PDF 287 KB] (723)
38401 Huang Da (黄达), Wu Jun-Jie (吴俊杰), Tang Yu-Hua (唐玉华)
  Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory
    Chin. Phys. B   2013 Vol.22 (3): 38401-038401 [Abstract] (834) [HTML 0 KB] [PDF 273 KB] (1202)
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